Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes

DOI: 10.48550/arXiv.2601.13366

G. Meucci, P. O Konstantinopoulou, T. Jansen, G. Nagda, D. J Carrad, E. Di Gennaro, Y. Chen, N. Manca, N. Bergeal, M. Bibes, A. Kalaboukhov, M. Salluzzo, R. Citro, F. Trier, N. Pryds, F. Miletto Granozio, A. Sambri, T. S Jespersen
Year of Publication: 2026

The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective charging energy U. Here, we show freestanding LAO/STO micro-membranes naturally hosting negative-U centers, where lateral confinement arises intrinsically, rather than from engineered nanostructures. These centers coexist with gate-tunable superconductivity and can remain stable upon thermal cycling from millikelvin temperatures to room temperature. Transport is in excellent agreement with calculations based on a negative-U Anderson model, and electrostatic simulations indicate characteristic center sizes of 20-80 nm. Our findings suggest that negative-U centers may arise from the intrinsic interfacial inhomogeneity typical of LAO/STO, and should therefore be considered a general feature of the LAO/STO interface. This could have important consequences for the microwave response of interfacial superconducting devices.

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Submitted to Nature Communications 2026.